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* High DC Current Gain hFE = 40 - 160 @ IC = 20 mAdc * Current Gain Bandwidth Product -- fT = 15 MHz (Min) @ IC = 10 mAdc * Low Output Capacitance Cob = 10 pF (Max) @ f = 1.0 MHz . . . designed for use in line-operated equipment requiring high fT.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
NPN Silicon High-Voltage Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating 6.0 2.0 4.0 8.0 14 12 16 10 0 0
Figure 1. Power-Temperature Derating Curve
20
Symbol
Symbol
TJ, Tstg
VCEO
VCB
VEB
JC
PD
IC
IB
40 60 80 100 120 TC, CASE TEMPERATURE (C)
- 65 to + 150
Value
8.33
Max
15 0.12
150
450
350
0.3
5.0
mAdc
Watts W/_C
_C/W
Unit
Unit
Adc
Vdc
Vdc
Vdc
_C
140
160
0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS
MJE3439
CASE 77-08 TO-225AA TYPE
Order this document by MJE3439/D
1
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MJE3439
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Small-Signal Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) Base-Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) DC Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 350 Vdc, IE = 0) Collector Cutoff Current (VCE = 450 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 300 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Characteristic VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol ICBO ICEO IEBO ICEX Cob hFE hfe fT Min 350 25 15 30 15 -- -- -- -- -- -- -- -- Max -- 200 500 0.8 1.3 0.5 10 20 20 20 -- -- -- Adc Adc Adc Adc MHz Unit Vdc Vdc Vdc Vdc pF -- --
2
0.01 0.007 0.005 0.003 0.002 0.001 1.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.07 0.05 0.03 0.02 1.0 0.7 0.5 0.3 0.2
Figure 2. Active-Region Safe Operating Area
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
MJE3439
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions.
Motorola Bipolar Power Transistor Device Data
MJE3439
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
3
MJE3439
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4
Motorola Bipolar Power Transistor Device Data
*MJE3439/D*
MJE3439/D

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